N,N-Dimethyltrimethylsilylamine CAS#: 2083-91-2; ChemWhat Code: 67183
Identification
| Product Name | N,N-Dimethyltrimethylsilylamine |
| IUPAC Name | N-methyl-N-trimethylsilylmethanamine |
| Molecular Structure |  |
| CAS Registry Number | 2083-91-2 |
| EINECS Number | 218-222-3 |
| MDL Number | MFCD00008297 |
| Synonyms | N,N-Dimethyltrimethylsilylamine 2083-91-2 N,N-Dimethylaminotrimethylsilane N-(Trimethylsilyl)dimethylamine Pentamethylsilylamine Silanamine, pentamethyl- (Dimethylamino)trimethylsilane Silanamine, N,N,1,1,1-pentamethyl- N-methyl-N-trimethylsilylmethanamine TMSDMA Dimethylaminotrimethylsilane (n,n-dimethylamino)trimethylsilane N,N,1,1,1-pentamethylsilanamine N,N-Dimethyltrimethylsilamine Dimethylamine, TMS derivative R5D6N5EJ26 MFCD00008297 TMS-DMA trimethylsilyldimethylamine Dimethyl(trimethylsilyl)amine UNII-R5D6N5EJ26 Dimethylamino(trimethyl)silane N-Trimethylsilyl-dimethylamine SCHEMBL377532 Dimethyl-trimethylsilanyl-amine (CH3)3SiN(CH3)2 n,n-dimethyl-trimethylsilylamine DTXSID7062168 EINECS 218-222-3 EINECS 242-020-4 CD5400 n,n-dimethyl-n-(trimethylsilyl)amine N,N-Dimethyl-1-(trimethylsilyl)amine N,N-Dimethyltrimethylsilylamine, 97% AKOS006222984 FS-5233 N,N-DIMETHYL(TRIMETHYLSILYL)AMINE Methanamine, N-methyl-1-(trimethylsilyl)- NS00046579 T0591 S06925 N,N-Dimethyltrimethylsilylamine, Selectophore(TM) J-013669 N,N-Dimethyltrimethylsilylamine, purum, >=95.0% (GC) |
| Molecular Formula | C5H15NSi |
| Molecular Weight | 117.26 |
| InChI | InChI=1S/C5H15NSi/c1-6(2)7(3,4)5/h1-5H3 |
| InChI Key | KAHVZNKZQFSBFW-UHFFFAOYSA-N |
| Isomeric SMILES | CN(C)[Si](C)(C)C |
| Patent Information | ||
| Patent ID | Title | Publication Date |
| CN116854727 | Preparation method and device system of dialkylamino metal halide and imino tri (dialkylamino) metal complex | 2023 |
| US2020/248309 | Deposition Of Carbon Doped Silicon Oxide | 2020 |
| US2020/377445 | IMINE-TYPE QUATERNARY AMMONIUM SALT CATALYST, PREPARATION METHOD THEREOF AND USE THEREOF FOR PREPARATION OF POLYISOCYANATE COMPOSITION | 2020 |
Physical Data
| Appearance | Colorless to Light yellow Liquid |
| Boiling Point, °C | Pressure (Boiling Point), Torr |
| 84 – 87 | 760.051 |
| 82 – 84 | |
| 86 | |
| 80 – 112 | |
| 116 – 118 | |
| 82 – 86 | |
| 77 – 79 | 720 |
| Density, g·cm-3 | Measurement Temperature, °C |
| 0.981 | |
| 0.7466 | 20 |
Spectra
| Description (NMR Spectroscopy) | Nucleus (NMR Spectroscopy) | Solvents (NMR Spectroscopy) | Temperature (NMR Spectroscopy), °C |
| Chemical shifts | 13C | benzene-d6 | |
| Chemical shifts | 1H | benzene-d6 | |
| Spectrum | 29Si | benzene, benzene-d6 | |
| Chemical shifts | 13C | CDCl3 | 0 |
| Chemical shifts | 13C | CH2Cl2 |
Route of Synthesis (ROS)
| Conditions | Yield |
| In methylbutane Ambient temperature; | 75% |
| In octane; acetonitrile at 20℃; for 5h; Solvent; Reflux; Experimental Procedure Into a 2 L 5-neck flask, 300 g of n-octane and 210 g of acetonitrile were charged. An oil bath was heated to 120° C. while stirring the resulting mixture into a reflux state, and then 64 g of acetonitrile containing a large amount of water accumulated in a reflux head was removed, and the resulting content was cooled. When an internal temperature was decreased to room temperature, 325 g of trimethylchlorosilane was charged into the 5-neck flask. Dimethylamine was fed from a gas phase part of the flask thereinto at a rate of 560 mL per minute for 4 hours at room temperature. A temperature of a reaction liquid was gradually increased up to 55° C. by an exothermic reaction. When loss of trimethylchlorosilane in a raw material was confirmed by a decrease in the temperature of the reaction liquid and gas chromatography (GC), feed of dimethylamine was stopped. A temperature of the oil bath was set to 80° C., and the resulting material was refluxed and aged for 1 hour. After cooling, 1040 g of the reaction liquid was obtained. The reaction liquid was filtered by a pressure filter, and a residue was washed with 50 g of acetonitrile to obtain 754 g of a filtrate. The filtrate was separated into a n-octane layer and an acetonitrile layer, and therefore was separated by a separating funnel to obtain 617 g of n-octane layer containing dimethylaminotrimethylsilane. When a GC analysis was conducted, 280 g of dimethylaminotrimethylsilane was contained therein and a reaction yield was 80%. Further, when hydrolyzable chlorine was measured, a content was 4 ppm. As a dehalogenation (chlorination) agent, 16 mg of potassium tert-butoxide, twice as many as moles of a chlorine component, was added to the n-octane layer, and a rectifying column prepared by packing HELI PACK into a column having a diameter of 2.5 cm and a length of 1 m was used at ordinary pressure to obtain 196 g of dimethylaminotrimethylsilane having a purity of 99% or more and a hydrolyzable chlorine component less than 1 ppm with a distillation yield of 70%. | 70% |
Safety and Hazards
| Pictogram(s) |  |
| Signal | Danger |
| GHS Hazard Statements | H225 (100%): Highly Flammable liquid and vapor [Danger Flammable liquids] H260 (15.83%): In contact with water releases flammable gases which may ignite spontaneously [Danger Substances and mixtures which in contact with water, emit flammable gases] H314 (55.4%): Causes severe skin burns and eye damage [Danger Skin corrosion/irritation] |
| Precautionary Statement Codes | P210, P223, P231+P232, P233, P240, P241, P242, P243, P260, P264, P280, P301+P330+P331, P302+P335+P334, P302+P361+P354, P303+P361+P353, P304+P340, P305+P354+P338, P316, P321, P363, P370+P378, P402+P404, P403+P235, P405, and P501 (The corresponding statement to each P-code can be found at the GHS Classification page.) |
Other Data
| Druglikeness | |
| Lipinski rules component | |
| Molecular Weight | 117.266 |
| logP | 1.679 |
| HBA | 1 |
| HBD | 0 |
| Matching Lipinski Rules | 4 |
| Veber rules component | |
| Polar Surface Area (PSA) | 3.24 |
| Rotatable Bond (RotB) | 1 |
| Matching Veber Rules | 2 |
| Use Pattern |
| N,N-Dimethyltrimethylsilylamine CAS#: 2083-91-2 is an efficient deamination agent for methylsilanes, passivating agents, and reaction mixtures, which can be used in the coating of semiconductor materials. |
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