Sulfonium, [4-[1-(difluorosulfomethyl)-2,2,2-trifluoroethoxy]phenyl]bis[4-(1,1-dimethylethyl)phenyl]-, inner salt CAS#: 1465790-38-8; ChemWhat Code: 1491743

IdentificationPhysical DataSpectra
Route of Synthesis (ROS)Safety and HazardsOther Data

Identification

Product NameTriphenylsulfonium (3-hydroxytricyclo[3.3.1.13,7]decane-1-methoxycarbonyl)difluoromethane sulfonate
IUPAC Name
Molecular StructureStructure of Sulfonium, [4-[1-(difluorosulfomethyl)-2,2,2-trifluoroethoxy]phenyl]bis[4-(1,1-dimethylethyl)phenyl]-, inner salt CAS 1465790-38-8
CAS Registry Number 912290-04-1
EINECS NumberNo data available
MDL NumberNo data available
Beilstein Registry NumberNo data available
Synonymsbis(4-tert-butylphenyl)-{4-(1,1,3,3,3-pentafluoro-1-sulfonatopropan-2-yloxy)phenyl}-sulfonium
Molecular FormulaC29H31F5O4S2
Molecular Weight602.68
InChI
InChI KeyWNLKPXMQEKEKRJ-UHFFFAOYSA-N
Canonical SMILES
Patent Information
No data available

Physical Data

AppearanceWhite to off-white powder
SolubilityNo data available
Flash PointNo data available
Refractive indexNo data available
SensitivityNo data available

Spectra

No data available

Route of Synthesis (ROS)

No data available

Safety and Hazards

GHS Hazard StatementsNot Classified

Other Data

TransportationNONH for all modes of transport
Under the room temperature and away from light
HS CodeNo data available
StorageUnder the room temperature and away from light
Shelf Life2 years
Market PriceUSD
Druglikeness
Lipinski rules component
Molecular Weight602.687
logP10.365
HBA3
HBD0
Matching Lipinski Rules2
Veber rules component
Polar Surface Area (PSA)34.14
Rotatable Bond (RotB)10
Matching Veber Rules2
Use Pattern
Core Function: Photoacid Generator (PAG)
It absorbs light and undergoes photolytic cleavage
Produces a strong acid (difluoromethanesulfonic acid)
The generated acid can catalyze chemically amplified reactions or initiate subsequent cationic polymerization. It is a key functional additive in photoresist and cationic photopolymer curing systems.
II. Main Application Areas
1.Semiconductor Photoresists (Chemically Amplified Photoresists, CARs)
Applicable to:
i-line, KrF, and ArF lithography systems
High-resolution chemically amplified photoresists
Main functions:
Acid generation upon exposure
Catalyzes deprotection reactions
Amplifies exposure effects → improves resolution, sensitivity, and critical dimension / line edge roughness (CD/LER) control
Advantages of the adamantyl structure:
Provides high thermal stability
Reduces acid diffusion → improves resolution and line edge roughness
Enhances optical performance and formulation stability of photoresists
Cationic Photocuring Systems
Used in UV-induced cationic curing of epoxy resins and vinyl ether materials
UV irradiation → acid generation → initiates cationic ring-opening polymerization or crosslinking
Applications include:
UV-curable coatings and inks
Electronic encapsulation materials
Photo-patternable insulating layers (e.g., PSPI, PI)

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