tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS#: 857285-80-4; ChemWhat Code: 1499775

IdentificationPhysical DataSpectra
Route of Synthesis (ROS)Safety and HazardsOther Data

Identification

Product NameTriphenyl sulfonium, salt with 1-(difluorosulfomethyl)-2,2,2-trifluoroethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1)
IUPAC Name[4-[2-[(2-methylpropan-2-yl)oxy]-2-oxoethoxy]phenyl]-diphenylsulfanium;1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate
Molecular StructureStructure of tert-Butyl 2-[4-(diphenylsulphonium)phenoxy]acetate, nonaflate salt CAS 857285-80-4
CAS Registry Number 857285-80-4
EINECS NumberNo data available
MDL NumberNo data available
Beilstein Registry NumberNo data available
Synonyms(4-(2-(tert-butoxy)-2-oxoethoxy)phenyl)diphenylsulfonium 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate(4-(2-(tert-butoxy)-2-oxoethoxy)phenyl)diphenylsulfonium nonafluoro-n-butane-sulfonate4-tert-butoxycarbonylmethyloxyphenyldiphenylsulfonium nonafluoro-n-butanesulfonatep-t-butoxycarbonylmethoxyphenyldiphenylsulfonium nonafluoro-n-butanesulfonate
Molecular FormulaC28H25F9O6S2
Molecular Weight692.604
InChIInChI=1S/C24H25O3S.C4HF9O3S/c1-24(2,3)27-23(25)18-26-19-14-16-22(17-15-19)28(20-10-6-4-7-11-20)21-12-8-5-9-13-21;5-1(6,3(9,10)11)2(7,8)4(12,13)17(14,15)16/h4-17H,18H2,1-3H3;(H,14,15,16)/q+1;/p-1
InChI KeyQGJXWNMBTQGAFT-UHFFFAOYSA-M
Canonical SMILESCC(C)(C)OC(=O)COc1ccc(S+c2ccccc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F
Patent Information
No data available

Physical Data

AppearanceWhite to off-white powder
SolubilityNo data available
Flash PointNo data available
Refractive indexNo data available
SensitivityNo data available

Spectra

No data available

Route of Synthesis (ROS)

No data available

Safety and Hazards

GHS Hazard StatementsNot Classified

Other Data

TransportationNONH for all modes of transport
Under the room temperature and away from light
HS CodeNo data available
StorageUnder the room temperature and away from light
Shelf Life2 years
Market PriceUSD
Druglikeness
Lipinski rules component
Molecular Weight692.621
logP9.669
HBA5
HBD0
Matching Lipinski Rules2
Veber rules component
Polar Surface Area (PSA)51.21
Rotatable Bond (RotB)12
Matching Veber Rules1
Use Pattern
Photoacid Generator (PAG) for Semiconductor Lithography
The primary application of CAS 857285-80-4 is as a photoacid generator (PAG) in chemically amplified photoresists. The sulfonium cation generates a strong acid upon exposure to UV, DUV, electron-beam, or EUV radiation, enabling high-resolution pattern formation in semiconductor manufacturing.
Advanced Photoresist Formulations
Used in:KrF (248 nm) photoresists, ArF (193 nm) photoresists,EUV photoresists,High-resolution micro- and nano-patterning materials. The nonaflate counterion provides strong acidity, good thermal stability, and controlled acid diffusion, which are important for advanced lithography processes.
Microelectronics and MEMS Fabrication
Electronic Materials Research

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